Bonding and electronics of the silicene/MoTe2 interface under strain
Creators
- 1. Institute of Physics, Poznan University of Technology, Poznan, 61-138 (Poland)
Description
Density functional theory calculations have been performed to investigate the structural and electronic properties of silicene/MoTe2 heterostructure under strain. The results show three different interaction cases depending on the interface configuration. The interactions can be weak and limited to van der Waals forces, or strong and covalent producing hybrid states between pz–pz and px/py–pz orbital pairs of Si and Te. Covalent bonding gives rise to well-defined, energetically favorable configurations with properties distinguishably different from those observed in vdW-only configurations. The new hybrid states shared between the layers allow for more effective charge transfer between them, which is critical for the performance of electronic and optoelectronic devices.
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2019.06.156;
- PII
- S0169433219318653;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 491
- Journal Page Range
- p. 469-477
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55042408
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BONDING; COVALENCE; DENSITY FUNCTIONAL METHOD; EFFECTIVE CHARGE; LAYERS; MOLYBDENUM TELLURIDES; OPTOELECTRONIC DEVICES; PERFORMANCE; SILICENE; VAN DER WAALS FORCES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FABRICATION; JOINING; MOLYBDENUM COMPOUNDS; OPTICAL EQUIPMENT; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICON; TELLURIDES; TELLURIUM COMPOUNDS; TRANSDUCERS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.