Published October 2019 | Version v1
Journal article

Bonding and electronics of the silicene/MoTe2 interface under strain

  • 1. Institute of Physics, Poznan University of Technology, Poznan, 61-138 (Poland)

Description

Density functional theory calculations have been performed to investigate the structural and electronic properties of silicene/MoTe2 heterostructure under strain. The results show three different interaction cases depending on the interface configuration. The interactions can be weak and limited to van der Waals forces, or strong and covalent producing hybrid states between pz–pz and px/py–pz orbital pairs of Si and Te. Covalent bonding gives rise to well-defined, energetically favorable configurations with properties distinguishably different from those observed in vdW-only configurations. The new hybrid states shared between the layers allow for more effective charge transfer between them, which is critical for the performance of electronic and optoelectronic devices.

Additional details

Identifiers

DOI
10.1016/j.apsusc.2019.06.156;
PII
S0169433219318653;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
491
Journal Page Range
p. 469-477
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2019 Elsevier B.V. All rights reserved.