Published March 2013 | Version v1
Journal article

Hall effect of tetragonal and orthorhombic SrRuO3 films

  • 1. Faculty of Physics and Geosciences, University of Leipzig, 04103 Leipzig (Germany)
  • 2. IFW Dresden, Postfach 270116, 01171 Dresden (Germany)
  • 3. Institut fuer Physik, Martin-Luther-Universitaet Halle-Wittenberg, 06099 Halle (Germany)
  • 4. Max Planck Institute of Microstructure Physics, 06120 Halle (Germany)

Description

High quality orthorhombic and tetragonal SrRuO3 thin films were grown by pulsed laser deposition on SrTiO3(001) and Ba0.75Sr0.25TiO3 buffered LaAlO3(001) substrates. Resistivity vs. temperature curves showed a slope change at a Curie temperature of 147.5 ± 2 K for 40 nm thick films irrespective of crystalline symmetry. The Hall resistivity of both films contained an anomalous Hall contribution. The anomalous Hall coefficient was positive throughout the whole temperature range for the tetragonal film, whereas it showed a sign change at 143 K for the orthorhombic film. This is a strong indication that the Berry-phase mechanism is the dominant anomalous Hall effect mechanism in SrRuO3. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssr.201206500

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. Rapid Research Letters (Online)
Journal Volume
7
Journal Issue
3
Journal Page Range
p. 204-206
ISSN
1862-6270
CODEN
PSSRCS

Optional Information

Notes
With 3 figs., 17 refs.