Published October 23, 2000
| Version v1
Journal article
Chemical bonding state analysis of silicon carbide layers in Mo/SiC/Si multilayer mirrors by soft x-ray emission and absorption spectroscopy
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 77
- Journal Issue
- 17
- Journal Page Range
- [10 p.]
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 33047836
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; EMISSION SPECTROSCOPY; FILMS; SILICON CARBIDES; SOFT X RADIATION; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHEMICAL ANALYSIS; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; NONDESTRUCTIVE ANALYSIS; RADIATIONS; SILICON COMPOUNDS; SPECTROSCOPY; X RADIATION
Optional Information
- Contract/Grant/Project number
- AC03-76SF00098
- Notes
- Journal Publication Date: October 23 2000
- Funding organization
- US Department of Energy (United States)
- Secondary number(s)
- LBNL/ALS--43023