XPAD3 hybrid pixel detector applications

Using Si sensors, the XPAD3 chip can be used from 4 up to 25 keV. The CdTe detector was designed to improve efficiency at higher energies (60 keV), but it still works at low energy: data were collected at 8 keV. Firstly, small detector prototypes were built and used for scattering experiments at BM02/ESRF and DIFABS/SOLEIL. Comparisons were made by collecting small angle X-ray scattering data using the same settings with the XPAD3 and the beam line CCD camera, as well as diffuse scattering from a quasi-crystal. Finally, a surface diffraction experiment was performed to characterize the strain in a few layers of GaInAs epitaxially grown on a GaAs single crystal.