Published September 7, 1998 | Version v1
Journal article Metadata-only

New compounds with MgAgAs-type structure: NbIrSn and NbIrSb

Creators

  • 1. Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636 (United States)

Description

NbIrSn and NbIrSb crystallize in a cubic MgAgAs-type structure with lattice parameters of 617.76(2) and 614.97(2) pm, respectively. Both compounds exhibit incongruent melting behaviour. NbIrSn is a p-type semiconductor with an energy gap of 0.28 eV. At room temperature, it has a Seebeck coefficient of +176 μV K-1 and a resistivity of 1.1 Ω cm. NbIrSb is metallic with S = +3.5 μV K-1 and ρ = 1.5x10-3 Ω cm at room temperature. The formation of the solid solutions NbIrSn1-xSbx has been confirmed. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

URL
http://www.iop.org/;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
10
Journal Issue
35
Journal Page Range
p. 7843-7850
ISSN
0953-8984

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
32005427
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANTIMONY ADDITIONS; ANTIMONY COMPOUNDS; CHEMICAL PREPARATION; ELECTRIC CONDUCTIVITY; ENERGY GAP; IRIDIUM COMPOUNDS; LATTICE PARAMETERS; NIOBIUM COMPOUNDS; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS
Descriptors DEC
ALLOYS; ANTIMONY ALLOYS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS