High-k HfTaO stacks in response to microwave irradiation

The effect of microwave treatment (6-15 s) at room temperature on the leakage current and mechanisms of conductivity in mixed HfTaO (10 nm) stacks has been studied by temperature dependent (20-1000C) current-voltage characteristics. It was established that the short 6 s irradiation affects the electrically active centers in the stack, provokes modification of the dominant conduction mechanism and improves the temperature stability of capacitors manifesting as low level of current at high temperatures (current decrease up to 4 orders of magnitude at 1000C after the treatment is detected). The traps involved in the conduction process in pre- and post-irradiated capacitors are identified.