Published 2007 | Version v1
Miscellaneous Metadata-only

Effect of combined action of chemical etching and ion implantation on structural and luminescent properties of Si crystals

Creators

  • 1. Chernovitskij Natsional'nyj Univ. im. Yu. Fed'kovicha, Chernovtsy (Ukraine)

Description

no abstract available

Part of:
The VI National conference on application of X-ray, synchrotron radiations, neutrons and electrons for material investigation (RSNEh 2007). The continuation of All-Union conferences on X-ray application for material investigation. Book of abstracts

Additional details

Additional titles

Original title (Russian)
Vliyanie kombinirovannogo vozdejstviya khimicheskogo travleniya i ionnoj implantatsii na strukturnye i lyuminestsentnye svojstva kristallov Si

Publishing Information

Publisher
IK RAN
Imprint Place
Moscow (Russian Federation)
Imprint Title
The VI National conference on application of X-ray, synchrotron radiations, neutrons and electrons for material investigation (RSNEh 2007). The continuation of All-Union conferences on X-ray application for material investigation. Book of abstracts
Imprint Pagination
650 p.
Journal Page Range
p. 429
Report number
INIS-RU--507

Conference

Title
6. National conference on application of X-ray, synchrotron radiations, neutrons and electrons for material investigation
Original Conference Title
VI Natsional'naya konferentsiya po primeneniyu rentgenovskogo, sinkhrotronnogo izluchenij, nejtronov i ehlektronov dlya issledovaniya materialov (RSNEh 2007)
Acronym
RSNEh 2007
Dates
12-17 Nov 2007
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
39080053
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ATOMIC FORCE MICROSCOPY; DISLOCATIONS; ETCHING; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; PHOSPHORUS IONS; PHOTOLUMINESCENCE; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION; SURFACE PROPERTIES; THICKNESS; X-RAY DIFFRACTION
Descriptors DEC
BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; DIMENSIONS; DISTRIBUTION; DOSES; ELEMENTS; EMISSION; ENERGY RANGE; IONS; KEV RANGE; LINE DEFECTS; LUMINESCENCE; MICROSCOPY; PHOTON EMISSION; SCATTERING; SEMIMETALS; SURFACE FINISHING

Optional Information

Notes
Imprint:VI Natsional'naya konferentsiya po primeneniyu rentgenovskogo, sinkhrotronnogo izluchenij, nejtronov i ehlektronov dlya issledovaniya materialov (RSNEh 2007). Prodolzhenie Vsesoyuznykh soveshchanij po primeneniyu rentgenovskikh luchej dlya issledovaniya materialov. Tezisy dokladov