Published May 2010 | Version v1
Journal article

Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films

  • 1. Materials Science and Engineering Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States) and Data Storage Systems Centre, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
  • 2. Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

Description

B2 ordered FeRh thin films switch from antiferromagnetic (AFM) to ferromagnetic (FM) state on heating above 350 K and switch back on cooling, with a hysteresis. This property makes FeRh a very attractive choice as a write-assist layer material for low temperature heat assisted magnetic recording (HAMR) media. Studies have shown that as we decrease the thickness of the FeRh films, the B2 phase is no longer AFM even below 350 K and there is a thickness dependant FM stabilization of the B2 phase. It was also proved that slightly Rh-richer compositions (>50 at. % Rh) were more preferable to stabilize the AFM phase. The current study focuses on growing highly ordered FeRh films by alternate layer rf sputtering of thin layers of iron and rhodium onto a heated substrate. It has been shown that films with rhodium content beyond 55 at. % contain a disordered bcc FM phase which gives rise to residual moment at room temperature even for thicker films.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
107
Journal Issue
9
Journal Page Range
p. 09E318-09E318.3
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
11. joint MMM-Intermag conference
Dates
18-22 Jan 2010
Place
Washington, DC (United States)

Optional Information

Notes
(c) 2010 American Institute of Physics