Deuterium retention in carbides and doped graphites

The retention of 1 keV and 8 keV deuterium implanted in B, Si, and Ti doped graphites and in the carbides B4C, SiC and TiC up to 6.7 x 1019 D atoms/cm2 has been studied at room temperature with thermal desorption spectroscopy (TDS) and ion beam analysis. Compared to pyrolytic graphite all doped graphites showed a tendency to increased retention of deuterium, especially the materials with high porosity. For the carbides the saturation concentration in the implantation zone in B4C is about 0.4 D per target atom and therefore comparable to the saturation concentration of D in graphite. SiC exhibits a significant higher saturation concentration of 0.6 D per target atom, whereas TiC shows a significant lower saturation concentration of 0.15 D per target atom. (orig.)