Published 1989 | Version v1
Miscellaneous Metadata-only

Native defects in GaAs: charge stability and excitation and ionization energies

Creators

  • 1. Sao Paulo Univ., SP (Brazil). Inst. de Fisica

Description

Published in summary form only

Availability note (English)

Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.

Additional details

Additional titles

Original title (Portuguese)
Defeitos nativos em GaAs: estabilidade de carga e energias de excitacao e ionizacao

Publishing Information

Imprint Title
Proceedings of the 12. National Meeting on Condensed Matter Physics
Imprint Pagination
301 p.
Journal Page Range
p. 232.

Conference

Title
12. National Meeting on Condensed Matter Physics.
Dates
9-13 May 1989.
Place
Caxambu, MG (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
20070389
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; EXCITATION; GALLIUM ARSENIDES; IONIZATION; MULTIPLE SCATTERING; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; SCATTERING

Optional Information

Notes
Imprint:Anais do 12. Encontro Nacional de Fisica da Materia Condensada.