Published January 2002 | Version v1
Journal article Metadata-only

An application of a single electron transistor to read out device for super conducting radiation detector

Creators

  • 1. Nagoya Univ., School of Engineering, Dept. of Nuclear Engineering, Nagoya, Aichi (Japan)

Description

An application of a single electron transistor device is proposed to read out signals from super conducting tunnel junction radiation detectors with high sensitivity and good signal to noise ratio. Here are presented preliminary consideration on the device design and fabrication method. (author)

Additional details

Publishing Information

Journal Title
Hoshasen
Journal Volume
28
Journal Issue
1
Journal Page Range
p. 33-37
ISSN
0285-3604

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
33053808
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRODES; FABRICATION; FIELD EFFECT TRANSISTORS; JUNCTION TRANSISTORS; QUANTUM MECHANICS; RADIATION DETECTORS; READOUT SYSTEMS; SENSITIVITY; SIGNAL-TO-NOISE RATIO; SUPERCONDUCTORS; TUNNEL DIODES
Descriptors DEC
MEASURING INSTRUMENTS; MECHANICS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSISTORS

Optional Information

Notes
6 refs., 7 figs.