Published 1986
| Version v1
Book
LPCVD tungsten deposition on Si-Ge alloy
Creators
- 1. Sandia National Labs., Div. 2147, P.O. Box 5800, Albuquerque, NM 87185
Description
LPCVD has a number of advantages. It is a simpler process than sputtering. It appears to be self-cleaning, a distinct advantage over the more surface-condition-sensitive sputtering process. LPCVD does not mechanically damage the surface as does sputtering, and this may be responsible for the low initial contact resistance observed. Aging profiles tend toward the high end of the acceptance window. This may imply a higher activation energy and a longer lifetime
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-32-4
- Imprint Title
- Tungsten and other refractory metals for VLSI applications
- Journal Page Range
- p. 497-504.
Conference
- Title
- Workshop on tungsten for VLSI applications.
- Dates
- 12-13 Nov 1984.
- Place
- Albuquerque, NM (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18030963
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; AGING; CHEMICAL VAPOR DEPOSITION; CLEANING; ELECTRIC CONDUCTIVITY; GERMANIUM ALLOYS; LIFETIME; PERFORMANCE TESTING; PRESSURE DEPENDENCE; SILICON ALLOYS; SPUTTERING; SURFACE PROPERTIES; TUNGSTEN
- Descriptors DEC
- ALLOYS; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; METALS; PHYSICAL PROPERTIES; SURFACE COATING; TESTING; TRANSITION ELEMENTS