Influences of different structures on the characteristics of H₂O-based and O₃-based La_x Al_y O films deposited by atomic layer deposition

H₂O-based and O₃-based La_x Al_y O nanolaminate films were deposited on Si substrates by atomic layer deposition (ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La_x Al_y O films were studied. Chemical bonds in the La_x Al_y O films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the La_x Al_y O films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability. (paper)