Published September 18, 1979 | Version v1
Patent

Purification of HgI2 for nuclear detector fabrication

Description

The invention is directed to a process for the purification of HgI2 utilized as raw material for growing crystals of detector quality. The process involves the purification of mercuric iodide raw material utilized in the growth of high-quality crystals by the sequential steps of: synthesis of mercuric iodide from essentially pure mercury and iodine purified by repeated sublimation by melting the mercury and iodine in stoichiometric amounts in an evacuated reaction tube at a temperature of 260 to 3000C for a time period of one-half to six hours; repeated sublimation of the synthetic mercuric iodine material by subjecting the synthetic mercuric iodide material in a gradient furnace having a temperature from about 60 to 800C in the cool zone to about 100 to 1400C in the hot zone and putting the material through 6 to 30 cycles in the furnace; and zone refining of the resublimed material by subjecting the material to from 30 to 100 melting passes through a furnace having a temperature from 259 to 3000C. (LL)

Availability note (English)

Available from Micromedia Ltd., 165 Hotel de Ville, Hull, Quebec, Canada J8X 3X2.

Additional details

Publishing Information

Imprint Pagination
15 p.
IPC:
Int. Cl. C01G 13/04.
IPC
Int. Cl. C01G 13/04.
Patent number
CA patent document 1062438/A/

INIS

Country of Publication
Canada
Country of Input or Organization
Canada
INIS RN
11552987
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
HGI2 SEMICONDUCTOR DETECTORS; MERCURY IODIDES; PURIFICATION; SUBLIMATION; SYNTHESIS; ZONE REFINING
Descriptors DEC
EVAPORATION; HALIDES; HALOGEN COMPOUNDS; IODIDES; IODINE COMPOUNDS; MEASURING INSTRUMENTS; MERCURY COMPOUNDS; PHASE TRANSFORMATIONS; RADIATION DETECTORS; REFINING; SEMICONDUCTOR DETECTORS; SEPARATION PROCESSES