Published September 1973
| Version v1
Journal article
Account of relaxation effects in surface layers of semiconductors when studying ion-electron emission
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Учет релаксационных эффектов в поверхностных слоях полупроводников при исследовании ионно-электронной эмиссии
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 15
- Journal Issue
- 9
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 2612-2614
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5125731
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; ARSENIDES; COMPARATIVE EVALUATIONS; DIAGRAMS; ELECTRON EMISSION; GERMANIUM; HIGH TEMPERATURE; INDIUM COMPOUNDS; ION EMISSION; KEV RANGE 10-100; RELAXATION; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; CHARGED PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; IONS; KEV RANGE; METALS
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Solid State.