A linear two-layer model for flat-band shift in irradiated MOS devices

A closed-form mathematical expression is derived for the flat-band shift as a function of gate bias during electron irradiation. The model assumes that the charge in the oxide consists of charged layers of variable thickness at each of the two interfaces, depending on voltage polarity and magnitude. The region of extreme linearity which has been observed by numerous investigators and which normally occurs for the relatively small values of gate bias voltages fits this closed-form solution. Analytical results compare favourably with data obtained from 500 to 700 A thick oxides and with other previously published data. (author)