Characterization of a radio frequency carbon nanotube growth plasma by ultraviolet absorption and optical emission spectroscopy
Creators
- 1. Center for Nanotechnology, National Aeronautics and Space Administration (NASA), Ames Research Center, Mail Stop (MS) 223-2, Moffett Field, California 94035 (United States)
Description
Radio frequency driven methane/hydrogen plasmas for carbon nanotube growth at pressures between 0.5 and 20 Torr, bias power from 0 to 110 W, and inductive coil power from 0 to 200 W are characterized via optical diagnostics. Ultraviolet absorption spectroscopy is used for quantitative determination of CH3 radical density for these systems, giving densities on the order of 1013 cm-3, accounting for approximately 0.1% of the plasma neutral content. Emission data are also analyzed to extract neutral gas temperatures from the H2 spectrum and electron densities and temperatures and approximate atomic H densities in the system. Neutral temperature is estimated between 700 and 1100 K, though the lower electrode is heated to 1273 K. Electron temperature is estimated to be between 2.5 and 3.5 eV in the high-energy (>12 eV) portion of the electron energy distribution, and the data suggest an overall non-Maxwellian distribution of electrons. The dissociation of hydrogen is estimated at around 0.1%. Dependencies on power and pressure are explored, indicating more efficient ionization, dissociation, and electron heating at lower pressure and higher power. The absence of any dependency on coil power suggests the plasma is operating in a noninductive mode for these conditions
Additional details
Identifiers
- DOI
- 10.1063/1.1865315;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 97
- Journal Issue
- 8
- Journal Page Range
- p. 084311-084311.11
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36107023
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ABSORPTION; ABSORPTION SPECTROSCOPY; CARBON; CRYSTAL GROWTH; DISSOCIATION; ELECTRODES; ELECTRON DENSITY; ELECTRON TEMPERATURE; ELECTRONS; EMISSION SPECTROSCOPY; ENERGY SPECTRA; EV RANGE 01-10; EV RANGE 10-100; HYDROGEN; IONIZATION; METHANE; METHYL RADICALS; NANOTUBES; PLASMA DENSITY; PLASMA DIAGNOSTICS; PLASMA HEATING; RADIOWAVE RADIATION; RF SYSTEMS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; ULTRAVIOLET RADIATION; ULTRAVIOLET SPECTRA
- Descriptors DEC
- ALKANES; ALKYL RADICALS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; EV RANGE; FERMIONS; HEATING; HYDROCARBONS; LEPTONS; NANOSTRUCTURES; NONMETALS; ORGANIC COMPOUNDS; RADIATIONS; RADICALS; SORPTION; SPECTRA; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2005 American Institute of Physics