Published November 1995 | Version v1
Journal article

Photon radiation damage in high purity silicon and LEC Si gallium arsenide detectors

  • 1. Bologna Univ. (Italy). Dipartimento di Fisica
  • 2. Dipartimento di Scienze dell'Ingegneria, Universita di Modena, via Campi 213/B, 41100 Modena (Italy)
  • 3. Modena Univ. (Italy). Ist. di Fisica
  • 4. Dipartimento di Fisica, Universita di Udine, via delle Scienze 208, 33100 Udine (Italy)
  • 5. FRAE-CNR, Via Gobetti 25, 40126 Bologna (Italy)
  • 6. Alenia S.p.A., Direzione Ricerche, via Tiburtina Km. 12.400, 00100 Roma (Italy)

Description

Observations have been made of the behaviour of high resistivity silicon and semi-insulating gallium arsenide ionizing radiation detectors after exposure of up to 30 Mrad 60Co photons. Results are presented on leakage current and deep level defects of the substrate material of photon damage devices. These findings have been related to the charge collection efficiency of the detectors. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Physics. B, Proceedings Supplements
Journal Volume
44
Journal Page Range
p. 531-535.
ISSN
0920-5632
CODEN
NPBSE7

Conference

Title
4. international conference on advanced technology and particle physics.
Dates
3-7 Oct 1994.
Place
Como (Italy).