Published 1989 | Version v1
Book

Sputtering yield. Chapter 4

  • 1. Okayama Univ., Ridai-cho (Japan). Dept. of Applied Physics
  • 2. Nagoya Univ. (Japan). Dept. of Physics

Description

The theoretical background for evaluation of the sputtering yield is described. Emphasis is given on basic processes that govern the sputtering yield. In section 2 the sputtering yield of monatomic solids at normal incidences is described. Here it is pointed out that the sputtering yield of a given combination of incident and target elements can be predicted with a reasonable accuracy using a semiempirical equation. In section 3 the sputtering yield for monatomic solids for glancing incidence is treated and an empirical equation is also presented. In section 4 the sputtering yield of multi-component systems is dealt with and it is pointed out that understanding of the phenomena is still premature. Finally the angular distribution of ejected particles is discussed in section 5. 110 refs.; 25 figs.; 4 tabs

Additional details

Publishing Information

Publisher
Elsevier.
Imprint Place
Amsterdam (Netherlands)
ISBN
0 444 87280 9
Imprint Title
Ion beam assisted film growth
Imprint Pagination
456 p.
Journal Volume
3
Series
Beam Modification of materials.
Journal Page Range
p. 59-100.

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
20043149
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ION BEAMS; REACTION KINETICS; SPUTTERING
Descriptors DEC
BEAMS; KINETICS

Optional Information

Notes
Includes list of symbols. Imprint:Includes subject index and material index.