Sputtering yield. Chapter 4
Creators
- 1. Okayama Univ., Ridai-cho (Japan). Dept. of Applied Physics
- 2. Nagoya Univ. (Japan). Dept. of Physics
Description
The theoretical background for evaluation of the sputtering yield is described. Emphasis is given on basic processes that govern the sputtering yield. In section 2 the sputtering yield of monatomic solids at normal incidences is described. Here it is pointed out that the sputtering yield of a given combination of incident and target elements can be predicted with a reasonable accuracy using a semiempirical equation. In section 3 the sputtering yield for monatomic solids for glancing incidence is treated and an empirical equation is also presented. In section 4 the sputtering yield of multi-component systems is dealt with and it is pointed out that understanding of the phenomena is still premature. Finally the angular distribution of ejected particles is discussed in section 5. 110 refs.; 25 figs.; 4 tabs
Additional details
Publishing Information
- Publisher
- Elsevier.
- Imprint Place
- Amsterdam (Netherlands)
- ISBN
- 0 444 87280 9
- Imprint Title
- Ion beam assisted film growth
- Imprint Pagination
- 456 p.
- Journal Volume
- 3
- Series
- Beam Modification of materials.
- Journal Page Range
- p. 59-100.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 20043149
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ION BEAMS; REACTION KINETICS; SPUTTERING
- Descriptors DEC
- BEAMS; KINETICS
Optional Information
- Notes
- Includes list of symbols. Imprint:Includes subject index and material index.