Published April 15, 2006 | Version v1
Journal article

Study of electrical transport and magnetic properties in CaMn1-xCu xO3

  • 1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

Description

Copper doped, CaMn1-xCu xO3 compounds have been prepared in single phase form for x = 0-0.20. XRD patterns could be analyzed using Pbnm space group with typical lattice parameters a = 5.276 A, b = 5.259 A and c = 7.459 A. All samples exhibit antiferromagnetic transitions with Neel temperatures around 124 K. The temperature variations of electrical resistivity follow the semi-conducting behaviour and they could be analyzed using variable range hopping with Coulomb interaction (ES-VRH) model. The Cu doping is found to enhance the antiferromagnetic interactions

Additional details

Identifiers

DOI
10.1016/j.mseb.2005.12.034;
PII
S0921-5107(06)00034-1;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
129
Journal Issue
1-3
Journal Page Range
p. 54-58
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.