Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit/in.2 storage

The formation of very fine Si dots with a bit pitch and a track pitch of less than 25 nm using electron-beam (EB) lithography on ZEP520 and calixarene EB resists and CF4 reactive ion etching has been demonstrated. The experimental results indicate that the calixarene resist is very suitable for forming an ultrahigh-packed bit array pattern of Si dots. This result promises to open the way toward 1 Tbit/in.2 storage using patterned media with a dot size of <15 nm