Non-rutherford elastic scattering cross section for 160 degrees backscattering of 1.30-2.21 MeV protons on silicon

The elastic backscattering cross sections of H:+ from silicon for a wide energy range are very useful parameters in the proton backscattering analysis for investigating silicon content and distribution profiles in the films. It is necessary to measure the scattering cross sections with good accuracy at a large scattering angle for the applications of proton backscattering analysis. The author reports the measured results of differential elastic backscattering cross sections of 1.30-2.21 MeV protons on silicon of 99.99% purity at a laboratory scattering angle of 160 degrees. Analyzed beams of H+ were provided by a 2 x 1.7 MV tandem accelerator at Lanzhou University. The lowest proton energy in the experiment is in the Rutherford backscattering energy region. The measured cross sections are presented and compared with previous graphical data. The data have been presented in a form that should be useful for those who wish to use the cross section values of 28Si(p, p)28Si near 160 degrees in a wider energy region