Published August 2014 | Version v1
Journal article

Shallow impurity states in AlxGa1–xAs cylindrical quantum wire

  • 1. School of Mathematics, Physics and Biological Engineering, Inner Mongolia University of Science and Technology, Baotou 014010 (China)
  • 2. Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010 (China)

Description

Polarons bound to a shallow Coulomb impurity center in cylindrical quantum wire is studied by a variational approach. The binding energies of the shallow impurity states in AlxGa1–xAs cylindrical quantum wire are calculated as functions of the composition x and the impurity position. It is confirmed that the binding energies are reduced obviously by the influence of the electron—phonon interaction and the binding energies are increased with increasing the composition x. (semiconductor physics)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/35/8/082002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
35
Journal Issue
8
Journal Page Range
[5 p.]
ISSN
1674-4926