Published September 2019
| Version v1
Journal article
Defect formation in doped with cobalt silicon at low-energy annealing
Creators
- 1. NUU, Research Institute of Physics of Semiconductors and Microelectronics, Tashkent (Uzbekistan)
Description
The processes of low-temperature annealing of deep levels in silicon doped with cobalt atoms are investigated by means of deep level transient spectroscopy. It is shown that in n-Si during heat treatment at 300°C concentrations of all levels are significantly reduced. Annealing activation energies for all observed levels in n-Si were determined. (author)
Additional details
Additional titles
- Original title (Russian)
- Дефектообразование при низкотемпературном отжиге кремния, легированного кобальтом
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 21
- Journal Issue
- 5
- Journal Page Range
- p. 332-334
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 52032423
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABUNDANCE; ACTIVATION ENERGY; ANNEALING; ATOMS; COBALT; CONCENTRATION RATIO; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; DOPED MATERIALS; ECOLOGICAL CONCENTRATION; N-TYPE CONDUCTORS; SILICON; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELEMENTS; ENERGY; HEAT TREATMENTS; MATERIALS; METALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Notes
- 8 refs., 2 figs.