Published May 1988 | Version v1
Journal article Metadata-only

Influence of radiation intensity on the yield of ion-induced etching of Si in XeF2

Creators

  • 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

Description

The influence of radiation intensity on the yield of ion-induced etching of silicon in XeF2 is investigated. The yield of ion-induced etching is found to increase substantially when the intensity of ion radiation is low. The reasons of changes in the yield of etching with the change in the intensity of ion-beam radiation are discussed

Additional details

Additional titles

Original title (Russian)
Влияние интенсивности облучения на процесс ионно-индуцированного травления Си в XeF

Publishing Information

Journal Title
Poverkhnost': Fizika, Khimiya, Mekhanika
Journal Issue
no.5
Series
Poverkhn.: Fiz., Khim., Mekh.
CODEN
PFKMD

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
20005450
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON IONS; CHEMICAL REACTION KINETICS; CHEMISORPTION; ENERGY DEPENDENCE; ETCHING; HELIUM IONS; ION IMPLANTATION; SILICON; XENON FLUORIDES; XENON IONS
Descriptors DEC
CHARGED PARTICLES; CHEMICAL REACTIONS; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; IONS; KINETICS; RARE GAS COMPOUNDS; REACTION KINETICS; SEMIMETALS; SEPARATION PROCESSES; XENON COMPOUNDS