Published November 1991
| Version v1
Journal article
Distribution of phosphorus produced in silicon by high-energy α-particle irradiation
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
Silicon monocrystals were irradiated with 12,16 and 20 MeV α-particles under 1015cm-2 dose to investigate diffusion redistribution of phosphorus additions in the crystal volume.It is established that 32P isotope concentration profiles go as deep as 10-60 μm, reaching the maximum at 20 MeV. The coefficient of phosphorus diffusion after annealing at 1100 and 1150 C in air durity 25,50 and 75 h is3x10-13 cm2/s for 1100 C and 1x10-12 cm2/s for 1150 C
Additional details
Additional titles
- Original title (Russian)
- Распределение фосфора, созданного в кремнии облучением высокоэнергетичными α-частицами
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 25
- Journal Issue
- 11
- Journal Page Range
- p. 2044-2046.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24009614
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALPHA PARTICLES; DIFFUSION; ENERGY DEPENDENCE; MEV RANGE 10-100; MONOCRYSTALS; PHOSPHORUS ADDITIONS; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HELIUM IONS; IONIZING RADIATIONS; IONS; MEV RANGE; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; TEMPERATURE RANGE