Published 2001 | Version v1
Miscellaneous Open

Study of phosphorus ion implantation effect on electronic structure of silicon

  • 1. Tashkentskij Gosudarstvennyj Tekhnicheskij Univ., Tashkent (Uzbekistan)

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no abstract available

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Part of:
Theses of reports of 31. International conference on physics of interaction of charged particles with crystals

Additional details

Additional titles

Original title (Russian)
Исследование влияния имплантации ионов фосфора на электронную структуру кремния

Publishing Information

Publisher
MGU
Imprint Place
Moscow (Russian Federation)
Imprint Title
Theses of reports of 31. International conference on physics of interaction of charged particles with crystals
Imprint Pagination
160 p.
Journal Page Range
p. 136
Report number
INIS-RU--463

Conference

Title
31. International conference on physics of interaction of charged particles with crystals
Original Conference Title
31. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
28-30 May 2001
Place
Moscow (Russian Federation)

Optional Information

Notes
2 refs. Imprint:Tezisy dokladov 31. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami