Published March 1984
| Version v1
Journal article
Decoration of radiation damage in silver by oxygen
- 1. Goettingen Univ. (Germany, F.R.). 2. Physikalisches Inst.
Description
The process of internal oxidation of indium in silver in the presence of correlated and uncorrelated radiation damage (preoxidation, ion implantation) was studied by means of the TDPAC technique. Isothermal annealing functions of oxygen decorated defects containing 111In, oxygen and vacancies were measured. These molecular-like complexes have been found only if 111In is implanted into the preoxidized foil, but not if oxygen is implanted into a 111In doped sample. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. B
- Journal Volume
- 230
- Journal Issue
- 1-3
- Series
- CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 706-709
- ISSN
- 0168-583X
Conference
- Title
- 10. international conference on atomic collisions in solids.
- Dates
- 18-22 Jul 1983.
- Place
- Bad Iburg (Germany, F.R.).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 15065411
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANNEALING; EXPERIMENTAL DATA; HIGH TEMPERATURE; INDIUM ADDITIONS; ION IMPLANTATION; MEDIUM TEMPERATURE; OXIDATION; OXYGEN IONS; PERTURBED ANGULAR CORRELATION; RADIATION EFFECTS; SILVER; TIME DEPENDENCE; VACANCIES; VERY HIGH TEMPERATURE
- Descriptors DEC
- ANGULAR CORRELATION; CHARGED PARTICLES; CHEMICAL REACTIONS; CORRELATIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; ELEMENTS; HEAT TREATMENTS; INFORMATION; IONS; METALS; NUMERICAL DATA; POINT DEFECTS; TRANSITION ELEMENTS