Published July 1, 2010 | Version v1
Journal article Metadata-only

Study of the effect of annealing of In(Ga)As quantum dots

Creators

  • 1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

Description

The size, structure and chemistry of In(Ga)As quantum dots as-grown by molecular beam epitaxy and after annealing at temperatures of 700 and 7500C have been studied by scanning transmission electron microscopy. The influence of the annealing temperatures on the degree of interdiffusion is investigated in detail by studying the size change of the quantum dots, and the values of diffusivities and activation energies for interdiffusion are derived.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/241/1/012054

Additional details

Identifiers

DOI
10.1088/1742-6596/241/1/012054;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
241
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
Electron Microscopy and Analysis Group Conference 2009
Acronym
EMAG 2009
Dates
8-11 Sep 2009
Place
Sheffield (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42054119
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACTIVATION ENERGY; ANNEALING; DIFFUSION; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; THERMAL DIFFUSIVITY; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ENERGY; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; MICROSCOPY; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; THERMODYNAMIC PROPERTIES