Behavior of p--n junction silicon radiation detectors in a temperature-compensated direct-current circuit

The behavior of silicon p--n junction radiation detectors used in the direct-current short-circuit mode without bias was examined under such load resistance which ensures operation in a temperature-compensated state. The objective was twofold; to check whether the compensation is achieved and to investigate the extent of compensation shown at temperatures other than that initially selected as the operation point. It was found that the detector performance in various thermal conditions can be predicted from a knowledge of the behavior of the individual detector and circuit parameters and that it is possible to stabilize the detector response within +- 2% over a relatively wide temperature range: 180--400C. However, in the case of devices which show thermal currents of large temperature sensitivity, compensation at small and at large dose rates needs to be considered separately