Published August 29, 2016 | Version v1
Journal article Metadata-only

Hole transport in c-plane InGaN-based green laser diodes

Creators

  • 1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123 (China)
  • 2. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

Description

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Additional details

Identifiers

DOI
10.1063/1.4961377;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
109
Journal Issue
9
Journal Page Range
vp.
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48035015
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CURRENT DENSITY; DOPED MATERIALS; HOLES; LASERS; LAYERS; QUANTUM WELLS; SILICON; SIMULATION
Descriptors DEC
ELEMENTS; MATERIALS; NANOSTRUCTURES; SEMIMETALS

Optional Information

Notes
(c) 2016 Author(s)