Published March 1985
| Version v1
Journal article
Precise lattice site determination for Th and U implanted into Be single crystals
- 1. Bonn Univ. (Germany, F.R.). Inst. fuer Strahlen- und Kernphysik
- 2. Bell Labs., Murray Hill, NJ (USA)
- 3. Guelph Univ., Ontario (Canada). Dept. of Physics
Description
The RBS/channeling technique was used to determine the lattice site of Th and U implanted in Be single crystals. A comparison of the experimental data to the results of a Monte Carlo channeling simulation program yields a lattice site which is identical with the ideal tetrahedral interstitial site within 0.1 A. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. B
- Journal Volume
- 7/8
- Journal Issue
- pt.1
- Series
- CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 109-112
- ISSN
- 0168-583X
Conference
- Title
- Ion beam modification of materials conference (IBMM '84).
- Dates
- 16-29 Jul 1984.
- Place
- Ithaca, NY (USA).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 16067226
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANGULAR DISTRIBUTION; BACKSCATTERING; BERYLLIUM; COORDINATION NUMBER; ION CHANNELING; ION IMPLANTATION; MONOCRYSTALS; MONTE CARLO METHOD; THORIUM IONS; URANIUM IONS
- Descriptors DEC
- ALKALINE EARTH METALS; ATOMIC IONS; CHANNELING; CHARGED PARTICLES; CRYSTALS; DISTRIBUTION; ELEMENTS; IONS; METALS; SCATTERING