Published March 1985 | Version v1
Journal article

Precise lattice site determination for Th and U implanted into Be single crystals

  • 1. Bonn Univ. (Germany, F.R.). Inst. fuer Strahlen- und Kernphysik
  • 2. Bell Labs., Murray Hill, NJ (USA)
  • 3. Guelph Univ., Ontario (Canada). Dept. of Physics

Description

The RBS/channeling technique was used to determine the lattice site of Th and U implanted in Be single crystals. A comparison of the experimental data to the results of a Monte Carlo channeling simulation program yields a lattice site which is identical with the ideal tetrahedral interstitial site within 0.1 A. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res., Sect. B
Journal Volume
7/8
Journal Issue
pt.1
Series
CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
109-112
ISSN
0168-583X

Conference

Title
Ion beam modification of materials conference (IBMM '84).
Dates
16-29 Jul 1984.
Place
Ithaca, NY (USA).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
16067226
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANGULAR DISTRIBUTION; BACKSCATTERING; BERYLLIUM; COORDINATION NUMBER; ION CHANNELING; ION IMPLANTATION; MONOCRYSTALS; MONTE CARLO METHOD; THORIUM IONS; URANIUM IONS
Descriptors DEC
ALKALINE EARTH METALS; ATOMIC IONS; CHANNELING; CHARGED PARTICLES; CRYSTALS; DISTRIBUTION; ELEMENTS; IONS; METALS; SCATTERING