Published August 16, 1987 | Version v1
Journal article

Preparation of In2O3:Sn (ITO) films by electron beam deposition

  • 1. Academy of Sciences of Vietnam, Hanoi. Inst. of Physics

Description

An electron beam technique has been employed for depositing In2O3:Sn films on targets consisting of pressed powders of In2O3 and SnO2 using an electron beam of 8 keV energy. The effect of annealing (in air or argon atmosphere) on the films has also been investigated. X-ray diffraction analysis shows that the films annealed at 450 0C were polycrystalline exhibiting a cubic In2O3 structure. Both SnO and SnO2 phases did not appear; this proves the substitutional doping of tin atoms in the In2O3 lattice. Electrical investigations give evidence that films with high transmittance and low resistivity may be prepared

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
102
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
K91-K94
ISSN
0031-8965
CODEN
PSSAB

Optional Information

Notes
Short note.