Published September 2009
| Version v1
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Structure defects in implanted silicon layers and quality of SiO2 layers formed on them
Creators
- 1. NPO 'Integral', Minsk (Belarus)
- 2. Belarus state univ., Minsk (Belarus)
Description
Radiation defects and residual damage in silicon, implanted with ions of III (B) and V (As, Sb, P) groups were investigated. The correlation of damage level of implanted layers and quality of oxide SiO2 formed on them was established. Annealing temperatures of implanted silicon provided satisfactory quality of oxide SiO2 were determined. (authors)
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41006797.pdf
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Additional details
Additional titles
- Original title (Russian)
- Дефекты структуры в имплантированных слоях кремния и качество сформированных на них слоев SiO2
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 978-985-476-728-4
- Imprint Title
- Interaction of radiation with solids. Proceedings of 8. International conference
- Imprint Pagination
- 365 p.
- Journal Page Range
- p. 61-63
- Report number
- INIS-BY--089
Conference
- Title
- 8. International conference 'Interaction of radiation with solids'
- Original Conference Title
- 8. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 23-25 Sep 2009
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 41006797
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANTIMONY IONS; ARSENIC IONS; BORON IONS; CRYSTAL DEFECTS; ION IMPLANTATION; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; IONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- 1 tabs., 5 figs. Imprint:Vzaimodejstvie izluchenij s tverdym telom. Materialy 8. Mezhdunarodnoj konferentsii