Published October 13, 2014 | Version v1
Journal article Metadata-only

High temperature terahertz response in a p-type quantum dot-in-well photodetector

Creators

  • 1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
  • 2. Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
  • 3. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

Description

Terahertz (THz) response observed in a p-type InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while strong THz responses up to ∼4.28 THz is observed at higher temperatures (∼100–130 K). Responsivity and specific detectivity at 9.2 THz (32.6 μm) under applied bias of −0.4 V at 130 K are ∼0.3 mA/W and ∼1.4 × 106 Jones, respectively. Our results demonstrate the potential use of p-type DWELL in developing high operating temperature THz devices.

Additional details

Identifiers

DOI
10.1063/1.4898088;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
15
Journal Page Range
p. 151107-151107.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46057221
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EQUIPMENT; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTODETECTORS; P-TYPE CONDUCTORS; QUANTUM DOTS; THZ RANGE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR MATERIALS

Optional Information

Notes
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