Published May 1, 1982
| Version v1
Journal article
Low-temperature release of ion-implanted helium from nickel
Creators
- 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
Description
This letter presents data on the release of He from Ni at temperatures between 18 and 300 K after ion implantation of He at 18 K. The release occurred in two stages, a sharply peaked release near 50 K and a broad release that extended from 80 to 300 K. For He doses in the range of 5 x 1014--1.4 x 1016 cm-2 and shallow implantation depths (<1000 A) the fraction released was 1.5% in the first stage and 4% in the second. For a dose of 4.4 x 1016 cm-2, the fraction released in the first stage was significantly higher. The activation energy for the first stage release was 0.11 +- 0.02 eV for all doses
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 40
- Journal Issue
- 9
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 851-853
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 13695453
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ACTIVATION ENERGY; DEGASSING; DEPTH; EXPERIMENTAL DATA; HELIUM; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; NICKEL; QUANTITY RATIO; TIME DEPENDENCE; VERY LOW TEMPERATURE
- Descriptors DEC
- DATA; DIMENSIONS; ELEMENTS; ENERGY; INFORMATION; METALS; NONMETALS; NUMERICAL DATA; RARE GASES; TRANSITION ELEMENTS