Published May 1, 1982 | Version v1
Journal article

Low-temperature release of ion-implanted helium from nickel

  • 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

Description

This letter presents data on the release of He from Ni at temperatures between 18 and 300 K after ion implantation of He at 18 K. The release occurred in two stages, a sharply peaked release near 50 K and a broad release that extended from 80 to 300 K. For He doses in the range of 5 x 1014--1.4 x 1016 cm-2 and shallow implantation depths (<1000 A) the fraction released was 1.5% in the first stage and 4% in the second. For a dose of 4.4 x 1016 cm-2, the fraction released in the first stage was significantly higher. The activation energy for the first stage release was 0.11 +- 0.02 eV for all doses

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
40
Journal Issue
9
Series
Appl. Phys. Lett.
Journal Page Range
851-853
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13695453
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ACTIVATION ENERGY; DEGASSING; DEPTH; EXPERIMENTAL DATA; HELIUM; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; NICKEL; QUANTITY RATIO; TIME DEPENDENCE; VERY LOW TEMPERATURE
Descriptors DEC
DATA; DIMENSIONS; ELEMENTS; ENERGY; INFORMATION; METALS; NONMETALS; NUMERICAL DATA; RARE GASES; TRANSITION ELEMENTS