Published April 2014 | Version v1
Journal article

Modeling of metal–oxide semiconductor: Analytical bond-order potential for cupric oxide

  • 1. College of Applied Science, Taiyuan University of Science and Technology, Taiyuan 030024 (China)
  • 2. College of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024 (China)

Description

Atomistic potentials for cupric element and cupric oxide are derived based on the analytical bond-order scheme that was presented by Brenner [Brenner D W, "Erratum: Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films", Phys. Rev. B 1992, 46 1948]. In this paper, for the pure cupric element, the energy and structural parameters for several bulk phases as well as dimmer structure are well reproduced. The reference data are taken from our density functional theory calculations and the available experiments. The model potential also provides a good description of the bulk properties of various solid structures of cupric oxide compound structures, including cohesive energies, lattice parameters, and elastic constants. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/23/4/047103

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
23
Journal Issue
4
Journal Page Range
[5 p.]
ISSN
1674-1056