Candidate for residual defect in silicon surface barrier detector

The residual defect in the pulse height defect of a silicon surface barrier detector is investigated theoretically. An application of the model of charge collection process leads to another candidate for the residual defect than the recombination defect. The residual defect is due to incomplete charge induction by electrons and holes inside a plasma column, which has dielectricity-like property. Quantity of induced charge is shown in a ratio to the number of produced electron-hole pairs as functions of depletion layer thickness, plasma column length and resistivity of the detector. Experimental result of the residual defect of 58Ni ion and its analysis method applying this model are presented. The residual defect is successfully explained by this model. (author)