Published August 15, 1977
| Version v1
Journal article
Compensation from implantation damage in InP
Creators
- 1. Rome Air Development Center, Deputy for Electronic Technology, Hanscom Air Force Base, Massachusetts 01731
Description
Compensation arising from ion damage has been investigated in InP. It is found that approximately-greater-than10 times the irradiation that produces resistive layers in GaAs is required to similarly compensate InP. The damage anneals in two stages indicating that two distinct defects contribute to the carrier removal process. Partial annealing at approx.400 degreeC rather than at 500 degreeC as in GaAs is suggested as a means of producing low-absorption highly resistive layers. From compensation considerations annealing to at least 550 degreeC will be required for dopant implantations if effective electrical utilization is to be achieved
Additional details
Identifiers
- DOI
- 10.1063/1.89673;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 31
- Journal Issue
- 4
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 256-258
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 8337339
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DOPED MATERIALS; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CONDUCTIVITY; HALL EFFECT; INDIUM PHOSPHIDES; ION IMPLANTATION; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTRICAL PROPERTIES; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent