Diagnostics of dust particles in plasma chemical vapor deposition process emission spectroscopy and langmuir probe
Creators
- 1. Southwestern Institute of Physics, Chengdu (China)
- 2. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu (China)
Description
Dust particles were produced in situ using reactive mixtures (SiH4/C2H4/Ar) in radio-frequency(RF) discharge. To get more information about dusty plasma, Langmuir probe and optical emission spectroscopy diagnoses were introduced. Then the emission intensities of Si+ 390.6 nm, Si2+ 380.6 nm and C+ 426.7 nm as a function of pressure, RF power, and flow rates of SiH4/C2H4 were presented. The emission intensities of Si+, Si2+ and C+ are enhanced with the increase of gas pressure and RF power. But as the flow rates of SiH4/C2H4 increase, the emission intensities are weakened. By using Langmuir probe, the density of dust particles was calculated from electron density and ion density, and then variation of the dust particle density with RF power was derived, which is basically consistent with the trend of SiH4/C2H4 dissociation. (authors)
Additional details
Publishing Information
- Journal Title
- High Power Laser and Particle Beams
- Journal Volume
- 25
- Journal Issue
- 5
- Journal Page Range
- p. 1283-1287
- ISSN
- 1001-4322
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 47083755
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ARGON; CARBON IONS; CHEMICAL VAPOR DEPOSITION; DENSITY; DISSOCIATION; DUSTS; ELECTRON DENSITY; EMISSION; EMISSION SPECTROSCOPY; ETHYLENE; FLOW RATE; LANGMUIR PROBE; MIXTURES; PARTICLES; PLASMA; PRESSURE DEPENDENCE; RADIOWAVE RADIATION; SILANES; SILICON IONS
- Descriptors DEC
- ALKENES; CHARGED PARTICLES; CHEMICAL COATING; DEPOSITION; DISPERSIONS; ELECTRIC PROBES; ELECTROMAGNETIC RADIATION; ELEMENTS; FLUIDS; GASES; HYDRIDES; HYDROCARBONS; HYDROGEN COMPOUNDS; IONS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHYSICAL PROPERTIES; PROBES; RADIATIONS; RARE GASES; SILICON COMPOUNDS; SPECTROSCOPY; SURFACE COATING
Optional Information
- Notes
- 6 figs., 19 refs.