Published May 28, 2016 | Version v1
Journal article

Electric-field domain boundary instability in weakly coupled semiconductor superlattices

  • 1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, 119991 Moscow (Russian Federation)
  • 2. Moscow State Pedagogical University, 119991 Moscow (Russian Federation)
  • 3. National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg (Russian Federation)
  • 4. A. F. Ioffe Physical and Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

Description

Damped oscillations of the current were observed in the transient current pulse characteristics of a 30-period weakly coupled GaAs/AlGaAs superlattice (SL). The switching time of the current is exponentially decreased as the voltage is verged towards the current discontinuity region indicating that the space charge necessary for the domain boundary formation is gradually accumulated in a certain SL period in a timescale of several hundreds ns. The spectral features in the electroluminescence spectra of two connected in parallel SL mesas correspond to the energy of the intersubband transitions and the resonance detuning of subbands caused by charge trapping in the quantum wells (QWs) residing in a region of the expanded domain boundary. The obtained results support our understanding of the origin of self-oscillations as a cyclic dynamics of the subband structure in the QWs forming the expanded domain boundary.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
119
Journal Issue
20
Journal Page Range
vp.
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2016 Author(s)