Published 1997 | Version v1
Miscellaneous Open

Direct deposition of gold on silicon with focused ion beams

Creators

  • 1. Paul Scherrer Inst. (PSI), Villigen (Switzerland)
  • 2. Eidgenoessische Technische Hochschule, Zurich (Switzerland)

Description

Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref

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Part of:
Paul Scherrer Institut annual report 1996. Annex IIIA: solid state research at large facilities

Additional details

Publishing Information

Publisher
Paul Scherrer Institut.
Imprint Place
Villigen PSI (Switzerland)
Imprint Title
Paul Scherrer Institut annual report 1996. Annex IIIA: solid state research at large facilities
Imprint Pagination
180 p.
Journal Page Range
p. 46.
Report number
INIS-CH--004

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
28056546
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
AUGER ELECTRON SPECTROSCOPY; DEPOSITION; EV RANGE 100-1000; EXPERIMENTAL DATA; GOLD; ION BEAMS; SILICON; SUBSTRATES; THIN FILMS
Descriptors DEC
BEAMS; DATA; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; EV RANGE; FILMS; INFORMATION; METALS; NUMERICAL DATA; SEMIMETALS; SPECTROSCOPY; TRANSITION ELEMENTS

Optional Information