Copper thin film of alternating textures
- 1. Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong (China)
- 2. Department of Mechanical Engineering, Hong Kong Polytechnic University, Hong Kong (China)
- 3. Department of Physics, Huazhong University of Science and Technology, Wuhan 430073 (China)
- 4. Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute Troy, New York 12180 (United States)
Description
It is common for thin films to have a predominant texture, but not alternating textures. In this letter, we report a copper film of alternating textures through self-organization. Using dc magnetron sputtering technique, we deposit copper films on a SiO2/Si(111) substrate. A thin layer of copper of <111> texture is first developed, and another thin layer of <110> ensued. As deposition continues, a third layer of copper of <111> texture is formed on the top, leading to a sandwich copper thin film of alternating <111> and <110> textures. The film morphology is characterized with scanning electron microscopy and atomic force microscopy and the texture with x-ray diffraction. Based on anisotropic elastic analyses and molecular dynamics simulations, we propose a model of texture evolution during the formation of multilayers, attributing the texture evolution to the competition of surface and strain energies
Additional details
Identifiers
- DOI
- 10.1063/1.1583866;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 24
- Journal Page Range
- p. 4265-4267
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048063
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; COPPER; CRYSTAL STRUCTURE; DEPOSITION; MOLECULAR DYNAMICS METHOD; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACE ENERGY; TEXTURE; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; ENERGY; FILMS; FREE ENERGY; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.