Analyses of As+ implanted GaAs's by means of a multidirectional and high depth resolution RBS/channeling technique

A low dose As+ implanted GaAs wafers are analyzed from the three integral axes <100>, <110> and <111> for the purpose of site location of displaced interstitial atoms by means of a high depth resolution RBS/channeling technique. As the results, double yield peaks have been observed, one (the first peak) arising from the disorder region formed around Rsub(p) (-- 32nm) and another (the second peak) from the deeper region than Rsub(p). The interstitial sites responsible for those peaks have been found to interchange through six stages of annealing and assigned at each stage. It is shown that the complexed interstitial structures such as the twin relaxed bond centered one and the twin split <100> interstitial (cy) one are formed at higher annealing temperatures. (author)