Published April 25, 2005 | Version v1
Journal article

Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

  • 1. CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy)
  • 2. CNR-Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy)
  • 3. NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania)
  • 4. CNR-ISTEC, Via Granarolo 64, I 48018 Faenza (Italy)

Description

Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers

Additional details

Identifiers

DOI
10.1016/j.mseb.2004.12.067;
PII
S0921-5107(04)00639-7;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
118
Journal Issue
1-3
Journal Page Range
p. 39-43
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
Symposium D: Functional oxides for advanced semiconductor technologies
Acronym
EMRS spring meeting 2004
Dates
24-28 May 2004
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.