Published June 9, 2008 | Version v1
Journal article Metadata-only

Optical properties and morphology of InAs/InP (113)B surface quantum dots

Creators

  • 1. UMR CNRS-6082 FOTON-INSA-Rennes, 20 Avenue des Buttes de Coeesmes, CS 14315, F-35043 Rennes Cedex (France)
  • 2. Lund University, Solid State Physics, P.O. Box 118, 22100 Lund (Sweden)

Description

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k·p theory in the envelope function approximation

Additional details

Identifiers

DOI
10.1063/1.2943651;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
23
Journal Page Range
p. 231911-231911.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40003332
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
APPROXIMATIONS; ARSENIC; CONTAMINATION; CRYSTAL GROWTH; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; OXIDES; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS; TEMPERATURE RANGE

Optional Information

Notes
(c) 2008 American Institute of Physics