Published October 1988
| Version v1
Journal article
Electron-hole fluid and two-dimensional electron gas in A3B6 group laminate semiconductors
Creators
Description
When studying InSe-semiconductor of group A3B6, it is shown that in a laminated semiconductor plane defects of the structure result in the formation of low-temperature macroscopic regions of two-dimensional gas of carriers, responsible for the Hall quantum effect and under conditions when effects of interparticle interaction are considerable, the presence of anisotropic states causes rebuilding of electron spectrum
Additional details
Additional titles
- Original title (Russian)
- Электронно-дырочная жидкост' и двумерный эелктронный гас в слистых полупроводниках группы А
Publishing Information
- Journal Title
- Uspekhi Fizicheskikh Nauk
- Journal Volume
- 156
- Journal Issue
- 2
- Series
- Usp. Fiz. Nauk.
- Journal Page Range
- 365-367
- ISSN
- 0042-1294
- CODEN
- UFNAA
Conference
- Title
- Scientific session of general physics and astronomy department of Akademy of Sciences of the USSR.
- Dates
- 25-26 May 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20062255
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTALS; ELECTRON GAS; ELECTRON-HOLE DROPLETS; HALL EFFECT; INDIUM SELENIDES; LAYERS; LOW TEMPERATURE; MAGNETIC FIELDS; SOLID-STATE PLASMA; TRANSITION TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; INDIUM COMPOUNDS; PHYSICAL PROPERTIES; PLASMA; SELENIDES; SELENIUM COMPOUNDS; THERMODYNAMIC PROPERTIES