Numerical calculation and analysis of proton radiation effects on CCD based on Monte Carlo method

Numerical calculation and analysis of proton radiation effects on CCD based on Monte Carlo method were developed by Geant4, a 3-D Monte Carlo code. The projected ranges and Bragg peaks of protons in Si and SiO₂ were calculated and the results were in good agreement with the reference data. The ionizing energy losses of protons in SiO₂ and non-ionizing energy losses in Si were also calculated and the results were in good agreement with the reference data. The detailed geometry model of the pixel of CCD was established. The ionizing energy deposition and non-ionizing energy deposition in the sensitive region of CCD caused by protons at different energy were calculated. The proton radiation effects on CCD were analyzed by combining experiment results and the numerical calculation. The achievements of this paper provide a basis of theories for CCD radiation degradation mechanisms and radiation damage evaluation study. (authors)