Published November 2, 2009
| Version v1
Journal article
Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions
- 1. Magnetic Materials Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
Description
Magnetoresistance ratio up to 330% at room temperature (700% at 10 K) has been obtained in a spin-valve-type magnetic tunnel junction (MTJ) consisting of a full-Heusler alloy Co2FeAl electrode and a MgO tunnel barrier fabricated on a single crystal MgO (001) substrate by sputtering method. The output voltage of the MTJ at one-half of the zero-bias value was found to be as high as 425 mV, which is the largest reported to date in MTJs using Heusler alloy electrodes. The present finding suggests that Co2FeAl may be one of the most promising candidates for future spintronics devices applications.
Additional details
Identifiers
- DOI
- 10.1063/1.3258069;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 95
- Journal Issue
- 18
- Journal Page Range
- p. 182502-182502.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41040479
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COBALT ALLOYS; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; HEUSLER ALLOYS; IRON ALLOYS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MONOCRYSTALS; SPIN; SPUTTERING; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TUNNEL EFFECT
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALLOYS; ALUMINIUM ALLOYS; ANGULAR MOMENTUM; CHALCOGENIDES; COPPER ALLOYS; COPPER BASE ALLOYS; CORROSION RESISTANT ALLOYS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; MAGNESIUM COMPOUNDS; MANGANESE ALLOYS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- (c) 2009 American Institute of Physics