Heavy-ion induced damage of crystalline Ge and W at 0.5 to 8 A · MeV range

High energy heavy-ion induced damage of the Ge and W crystals was studied by means of blocking and channeling. Beams of ions from C to Au with energies from 12 to 266 MeV were used both for the damage of the crystal and for the 'in-situ' measurements of the lattice disordering. The blocking minimum yield and angular half-width have been measured as a function of dose, and it is shown that the ion relative damaging efficiency for Ge decreases at high electronic energy-loss values. The mechanism of microannealing along the ion path is discussed. The saturation and dose-rate dependence of damage are explained in terms of the defect mobility and recombination processes. For W crystal the initial damaging power is proportional to the TRIM predicted displacements, and a disorder saturation is observed at high doses